SIMULATION OF A PRESSURE SENSOR SENSING ELEMENT BASED ON A CORRUGATED SILICON MEMBRANE 

Vadim S. Volkov, Candidate of technical sciences, associate professor, associate professor of the sub-department of instrument engineering, Penza State University (40 Krasnaya street, Penza, Russia), E-mail: vadimv_1978@mail.ru
Sergey N. Bazykin, Doctor of technical sciences, associate professor, head of the sub-department of instrument engineering, Penza State University (40 Krasnaya street, Penza, Russia), E-mail: cbazykin@yandex.ru
Vitaliy A. Bardin, Candidate of technical sciences, associate professor of the sub-department of instrument engineering, Penza State University (40 Krasnaya street, Penza, Russia), E-mail: vit-bardin@yandex.ru
Kristina S. Samokhina, Candidate of technical sciences, associate professor of the sub-department of instrument engineering, Penza State University (40 Krasnaya street, Penza, Russia), E-mail: Kristina.bazykina@mail.ru
Nataliya V. Volkova, Сandidate of biological sciences, associate professor, head of the sub-department of chemistry and methods of teaching chemistry, Penza State University (40 Krasnaya street, Penza, Russia), E-mail: balikovan@mail.ru

Background. The paper investigates the sensing element of a capacitive pressure sensor based on a silicon corrugated membrane. Materials and methods. Using finite element modeling, the parameters of the corrugation were determined, which make it possible to double the sensitivity compared to a flat membrane having similar overall dimensions. Results and conclusions. It is shown that the presence of an edge corrugation with a rectangular profile makes it possible to increase the sensitivity of the membrane.

semiconductor membrane, sensing element, corrugation, mechanical stress, deflection, sensitivity

Volkov V.S., Bazykin S.N., Bardin V.A., Samohina K.S., Volkova N.V. Simulation of a pressure sensor sensing element based on a corrugated silicon membrane. Izmerenie. Monitoring. Upravlenie. Kontrol' = Measuring. Monitoring. Management. Control. 2024;(4):76–83. (In Russ.). doi: 10.21685/2307-5538-2024-4-9